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micro power step-up dc-dc converter ap3015/a 1 oct. 2009 rev. 1. 3 bcd semiconductor manufacturing limited data sheet general description the ap3015/a are pulse frequency modulation (pfm) dc/dc converters. these two devices are func- tionally equivalent except the switching current limit. the ap3015 is designed for higher power systems with 350ma current limit, and the ap3015a is for lower power systems with 100ma current limit. the ap3015/a feature a wide input voltage. the oper- ation voltage is ranged from 1.2vto 12v (1v to 12v for ap3015a). a current limited, fixed off-time con- trol scheme conserves operating current, resulting in high efficiency over a br oad range of load current. they also feature low quie scent current, switching cur- rent limiting, low temperature coefficient, etc. fewer tiny external componen ts are required in the applications to save space and lower cost. furthermore, to ease its use in differnet systems, a dis- able terminal is designed to turn on or turn off the chip. the ap3015/a are available in sot-23-5 package. features low quiescent current in active mode (not switching): 17 a typical in shutdown mode: <1 a low operating v in 1.2v typical for ap3015 1.0v typical for ap3015a low v cesat switch 200mv typical at 300ma for ap3015 70mv typical at 70ma for ap3015a high output voltage: up to 34v fixed off-time control switching current limiting 350ma typical for ap3015 100ma typical for ap3015a operating temperature range: -40 o c to 85 o c applications mp3, mp4 battery power supply system lcd/oled bias supply handheld device portable communication device figure 1. package type of ap3015/a sot-23-5
micro power step-up dc-dc converter ap3015/a 2 oct. 2009 rev. 1. 3 bcd semiconductor manufacturing limited data sheet figure 2. pin configuration of ap3015/a (top view) pin description pin number pin name function 1 sw switch pin. this is the collector of the in ternal npn power switch. minimize the trace area connected to this pin to minimize emi 2 gnd ground pin. gnd should be tied direct ly to ground plane for best performance 3 fb feedback pin. set the output voltage through this pin. the formula is v out =1.23v*(1+r1/ r2). keep the loop between vout and fb as s hort as possible to mini mize the ripple and noise, which is beneficial to the stability and output ripple 4 shdn shutdown control pin. tie this pin above 0.9v to enable the device. tie below 0.25v to turn off the device 5v in supply input pin. bypass this pin with a ca pacitor as close to th e device as possible pin configuration k package (sot-23-5) sw fb v in shdn gnd 1 2 34 5
micro power step-up dc-dc converter ap3015/a 3 oct. 2009 rev. 1. 3 bcd semiconductor manufacturing limited data sheet shdn v in ordering information functional block diagram fb gnd sw q1 3 5 4 2 1 driver 400ns one shot bandgap current-limit reference current-limit comparator reset v ref feedback comparator enable figure 3. functional block diagram of ap3015/a package temperature range part number marking id packing type lead free green lead free green sot-23-5 -40 to 85 o c AP3015KTR-E1 ap3015ktr-g1 e6e g6e tape & reel ap3015aktr-e1 ap3015aktr-g1 e6f g6f tape & reel circuit type package g1: green ap3015 tr: tape and reel k: sot-23-5 - blank: ap3015 a: ap3015a e1: lead free bcd semiconductor's pb-free products, as desi gnated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green package.
micro power step-up dc-dc converter ap3015/a 4 oct. 2009 rev. 1. 3 bcd semiconductor manufacturing limited data sheet note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating cond itions" is not implied. exposure to "absolute max- imum ratings" for extended periods may affect device reliability. parameter symbol min max unit input voltage v in ap3105 1.2 12 v ap3105a 1.0 12 operating temperature t a -40 85 o c recommended operating conditions absolute maximum ratings (note 1) parameter symbol value unit input voltage v in 15 v sw voltage v sw 38 v fb voltage v fb v in v shdn pin voltage v shdn 15 v thermal resistance (junction to ambient, no heat sink) r ja 265 o c/w operating junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (soldering, 10sec) t lead 260 o c esd (human body model) 3000 v
micro power step-up dc-dc converter ap3015/a 5 oct. 2009 rev. 1. 3 bcd semiconductor manufacturing limited data sheet (v in =v shdn =1.2v, t a =25 o c, unless otherwise specified.) parameter symbol conditions min typ max unit input voltage v in ap3015 1.2 12 v ap3015a 1.0 12 quiescent current i q not switching 17 30 a v shdn =0v 1 feedback voltage v fb 1.205 1.23 1.255 v fb comparator hysteresis v fbh 8mv fb pin bias current i fb v fb =1.23v 30 80 na output voltage line regulation l nr 1.2v < v in < 12v 0.05 0.1 %/v switching current limit i l ap3015 300 350 400 ma ap3015a 75 100 125 switch saturation voltage v cesat ap3015, i sw =300ma 200 300 mv ap3015a, i sw =70ma 70 120 switch off time t off v fb >1v 400 ns v fb < 0.6v 1.5 s shdn input threshold high v th 0.9 v shdn input threshold low v tl 0.25 shdn pin current i shdn v shdn =1.2v 2 3 a v shdn =5v 8 12 switch leakage current i swl switch off, v sw =5v 0.01 5 a thermal resistance (junction to case) jc 52 o c/w electrical characteristics
micro power step-up dc-dc converter ap3015/a 6 oct. 2009 rev. 1. 3 bcd semiconductor manufacturing limited data sheet typical performance characteristics figure 4. quiescent current vs. junction temperature figure 5. feedback voltage vs. junction temperature figure 6. switch off time vs. junction temperature fi gure 7. shutdown pin current vs. shutdown pin voltage unless otherwise noted, v in =1.2v -50 -25 0 25 50 75 100 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 quiescent current ( a) junction temperature ( o c) quiescent current, no switching v in =1.2v v in =12v -50 -25 0 25 50 75 100 1.205 1.210 1.215 1.220 1.225 1.230 1.235 1.240 1.245 1.250 1.255 feedback voltage (v) junction temperature ( o c) 0.0 2.5 5.0 7.5 10.0 12.5 15.0 0 5 10 15 20 25 30 35 40 shutdown pin current ( a) shutdown pin voltage (v) t j =-50 o c t j =25 o c t j =100 o c -50 -25 0 25 50 75 100 350 360 370 380 390 400 410 420 430 440 450 switch off time (ns) junction temperature ( o c) v fb >1v, v in =1.2v
micro power step-up dc-dc converter ap3015/a 7 oct. 2009 rev. 1. 3 bcd semiconductor manufacturing limited data sheet figure 9. switch current limit vs. junction temperature typical performance ch aracteristics (continued) figure 10. saturation voltage vs. junction temperature figure 11. saturation voltage vs. junction temperature figure 8. switch current limit vs. junction temperature unless otherwise noted, v in =1.2v -50 -25 0 25 50 75 100 40 44 48 52 56 60 64 68 72 76 80 saturation voltage (mv) junction temperature ( o c) ap3015a, i switch =70ma v in =1.2v v in =12v -50 -25 0 25 50 75 100 200 250 300 350 400 450 500 switch current limit (ma) junction temperature ( o c) ap3015 v in =1.2v v in =12v -50 -25 0 25 50 75 100 80 82 84 86 88 90 92 94 96 98 100 102 104 106 108 110 112 114 116 118 120 switch current limit (ma) junction temperature ( o c) ap3015a v in =1.2v v in =12v -50 -25 0 25 50 75 100 150 160 170 180 190 200 210 220 230 240 250 saturation voltage (mv) junction temperature ( o c) ap3015, i switch =300ma v in =1.2v v in =12v
micro power step-up dc-dc converter ap3015/a 8 oct. 2009 rev. 1. 3 bcd semiconductor manufacturing limited data sheet figure 13. efficiency typical performance ch aracteristics (continued) figure 12. efficiency unless otherwise noted, v in =1.2v application information operating principles ap3015/a feature a constant off-time control scheme. refer to figure 3 the bandgap voltage v ref (1.23v typical) is used to control the output voltage. when the voltage at the fb pin drops below the lower hysteresis point of fee dback comparator (typical hysteresis is 8mv), the f eedback comparator enables the chip and the npn power switch is turned on, the current in the inductor begins to ramp up and store energy in the coil while the load current is supplied by the output capacitor. once th e current in the inductor reaches the current lim it, the cu rrent-limit comparator resets the 400ns one-shot which turns off the npn switch for 400ns. the sw voltage rises to the output voltage plus a diode drop and the inductor current begins to ramp down. during this time the energy stored in the induc tor is transferred to c out and the load. after the 400ns off-time, the npn switch is turned on and energy wi ll be stored in the inductor again. this cycle will continue until the voltage at fb pin reaches 1.23v, the feedback comparator disables the chip and turns off the npn switch. the load current is then supplied solely by output capacitor and the output voltage will decrease. when the fb pin voltage drops below the lower hysteresis point of feedback comparator, the feedback comparator enables the device and repeats the cycle described previously. under not switching condition, the i q of the device is about 17 a. the ap3015/a contain additional circuitry to provide protection during start-up or under short-circuit conditions. when the fb pin voltage is lower than approximately 0.6v, the swit ch off-time is increased to 1.5 s and the current limit is reduced to about 250ma (70ma for ap3015a). this reduces the average inductor current and helps to minimize the power dissipation in the ap3015/a power switch, in the external inductor and in the diode. the shdn pin can be used to turn off the ap3015/a and reduce the i q to less than 1 a. in shutdown mode the output voltage will be a diode drop below the input voltage. 0.1 1 10 50 55 60 65 70 75 80 85 efficiency (%) load current (ma) ap3015 v out =20v, l=10 h, c out =1 f refer to figure 14 v in =4.2v v in =3.3v v in =2.5v 0.1 1 10 50 55 60 65 70 75 80 85 efficiency (%) load current (ma) ap3015a v out =3.3v, l=10 h, c out =20 f refer to figure 15 v in =2.5v v in =1.2v
micro power step-up dc-dc converter ap3015/a 9 oct. 2009 rev. 1. 3 bcd semiconductor manufacturing limited data sheet typical application figure 14. ap3015 typical application in lcd/oled bias supply figure 15. ap3015a typical application in 1 or 2 cells to 3.3v boost converter c1, c2: x5r or x7r ceramic capacitor l1: sumida cdrh4d16fb/np-100mc or equivalent c1, c2, c3: x5r or x7r ceramic capacitor l1: sumida cdrh4d16fb/np-100mc or equivalent v in sw shdn ap3015 fb gnd v in l1 10 ? 2.5v to 4.2v c1 4.7 f c2 1 f d1 ss14 r2 130k r1 2m rload v out 20v v in sw shdn ap3015a fb gnd v in l1 10 ? 1.2v to 2.5v c1 4.7 f c2 20 f d1 ss14 r2 600k r1 1m rload v out 3.3v c3 10pf
micro power step-up dc-dc converter ap3015/a 10 oct. 2009 rev. 1. 3 bcd semiconductor manufacturing limited data sheet sot-23-5 unit: mm(inch) mechanical dimensions 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 0 0 ( 0 . 0 0 4 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen, 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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